Edge State and Intrinsic Hole Doping in Bilayer Phosphorene

Stacked bilayer phosphorene: strain-induced quantum spin Hall state and optical measurement

Bilayer phosphorene attracted considerable interest, giving a potential application in nanoelectronics owing to its natural bandgap and high carrier mobility. However, very little is known regarding the possible usefulness in spintronics as a quantum spin Hall (QSH) state of material characterized by a bulk energy gap and gapless spin-filtered edge states. Here, we report a strain-induced topol...

Landau levels of single-layer and bilayer phosphorene

Helical edge states and fractional quantum Hall effect in a graphene electron-hole bilayer.

Helical 1D electronic systems are a promising route towards realizing circuits of topological quantum states that exhibit non-Abelian statistics. Here, we demonstrate a versatile platform to realize 1D systems made by combining quantum Hall (QH) edge states of opposite chiralities in a graphene electron-hole bilayer at moderate magnetic fields. Using this approach, we engineer helical 1D edge c...

A study of bilayer phosphorene stability under MoS2-passivation

Despite the unique properties of black phosphorus (BP) and phosphorene, including high carrier mobility and in-plane anisotropy, their stability has been hampered by significant crystal deterioration upon exposure to oxygen and water. Herein, we investigate the chemical stability of MoS2-passivated black phosphorus (BP) or bilayer (2L) phosphorene van der Waals (vdW) heterostructures using the ...

Intrinsic Defects and H Doping in WO3

WO3 is widely used as industrial catalyst. Intrinsic and/or extrinsic defects can tune the electronic properties and extend applications to gas sensors and optoelectonics. However, H doping is a challenge to WO3, the relevant mechanisms being hardly understood. In this context, we investigate intrinsic defects and H doping by density functional theory and experiments. Formation energies are cal...